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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI08CNE8N G
Infineon Technologies

IPI08CNE8N G

Manufacturer Part Number IPI08CNE8N G
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 85V 95A TO262-3
Package PG-TO262-3
In Stock 4144 pcs
Data sheet IP(B,I,P)08CNE8N GPart Number GuideCoolMOS/OptiMOS Halogen Free 10/Dec/2008
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 130µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 6.4mOhm @ 95A, 10V
Power Dissipation (Max) 167W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Base Product Number IPI08C

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IPI08CNE8N G Datasheet PDF

Data sheet